Burapha University International Conference, BUU-2014

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Growth and Characterization of CrZrN Thin Film Deposited by DC Reactive Magnetron Co-Sputtering
Pornpimol Thunyaphum

Last modified: 2014-06-05

Abstract


Chromium zirconium nitride (CrZrN) thin films were deposited by reactive magnetron
co-sputtering method on silicon. Cr and Zr metals were used as sputtering targets. The Cr and Zr sputtering current were fixed at 300 mA and 900 mA, respectively. The sputtering gas (Ar) flow rate was fixed at 10 sccm and reactive gas (N2) flow rate was varied from 4 sccm to 12 sccm. The effects of nitrogen gas flow rate on the crystal structure, microstructure and thickness of the films were investigated by X-ray diffraction (XRD) and field emission scanning electron microscopy (FE-SEM). The results show the as-deposited films were (Cr,Zr)N solid solution. The film thickness and the crystallite size decreased from 569 nm to 363 nm and 17.8 nm to 13.4 nm, respectively, with increasing the nitrogen gas flow rate, while the lattice parameter was found to increased, from 4.327 Å to 4.425 Å, with increasing the nitrogen gas flow rate. Cross section analysis by FE-SEM showed compact columnar and dense morphology as a result of increasing the nitrogen gas flow rate.